2/4/6/8/12 Inch Wafer Single Crystal Si Substrate Type N/P Optional Silicon Carbide Silicon Wafer

US$25.00 50 pc (MOQ)
Product Details
Customization: Available
Material: Compound Semiconductor
Type: P-Type Semiconductor
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Fine Silicon Manufacturing(Shanghai)Ltd.
Manufacturer/Factory & Trading Company
Shanghai, China
Gold Member Since 2024

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2/4/6/8/12 Inch Wafer Single Crystal Si Substrate Type N/P Optional Silicon Carbide Silicon Wafer pictures & photos
2/4/6/8/12 Inch Wafer Single Crystal Si Substrate Type N/P Optional Silicon Carbide Silicon Wafer pictures & photos
2/4/6/8/12 Inch Wafer Single Crystal Si Substrate Type N/P Optional Silicon Carbide Silicon Wafer pictures & photos
2/4/6/8/12 Inch Wafer Single Crystal Si Substrate Type N/P Optional Silicon Carbide Silicon Wafer pictures & photos
2/4/6/8/12 Inch Wafer Single Crystal Si Substrate Type N/P Optional Silicon Carbide Silicon Wafer pictures & photos
2/4/6/8/12 Inch Wafer Single Crystal Si Substrate Type N/P Optional Silicon Carbide Silicon Wafer pictures & photos
  • 2/4/6/8/12 Inch Wafer Single Crystal Si Substrate Type N/P Optional Silicon Carbide Silicon Wafer
  • 2/4/6/8/12 Inch Wafer Single Crystal Si Substrate Type N/P Optional Silicon Carbide Silicon Wafer
  • 2/4/6/8/12 Inch Wafer Single Crystal Si Substrate Type N/P Optional Silicon Carbide Silicon Wafer
  • 2/4/6/8/12 Inch Wafer Single Crystal Si Substrate Type N/P Optional Silicon Carbide Silicon Wafer
  • 2/4/6/8/12 Inch Wafer Single Crystal Si Substrate Type N/P Optional Silicon Carbide Silicon Wafer
  • 2/4/6/8/12 Inch Wafer Single Crystal Si Substrate Type N/P Optional Silicon Carbide Silicon Wafer
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Product Description

Company Info.
  • Overview
  • Product Description
  • Product Parameters
  • Certifications
  • Packaging & Shipping
  • Company Profile
  • Our Advantages
  • FAQ
Overview

Basic Info.

Model NO.
12inch
Growth Method
CZ
Crystal Orientation
100
Dopant
Boron
Resistivity
1-100Ω
Frront Side
Polished
Edge
Polished
Diameter
300±0.2mm
Thickness
775±25μm
Transport Package
Semi Standard
Specification
TBD
Trademark
FSM
Origin
China
HS Code
3818001920
Production Capacity
5000PCS/Month

Product Description

Product Description

2/4/6/8/12 Inch Wafer Single Crystal Si Substrate Type N/P Optional Silicon Carbide Silicon Wafer2/4/6/8/12 Inch Wafer Single Crystal Si Substrate Type N/P Optional Silicon Carbide Silicon Wafer2/4/6/8/12 Inch Wafer Single Crystal Si Substrate Type N/P Optional Silicon Carbide Silicon Wafer2/4/6/8/12 Inch Wafer Single Crystal Si Substrate Type N/P Optional Silicon Carbide Silicon Wafer2/4/6/8/12 Inch Wafer Single Crystal Si Substrate Type N/P Optional Silicon Carbide Silicon Wafer

Product Parameters


Use reference value
 

Item Specification
Diameter 150mm 200mm 300mm
Type P/N P/N P/N
Notch SEMI/JEIDA Notch/OF Notch
Thickness(μm) 675±25/625±25 725±25 725±25
Surface Polished Polished Polished
Inside Etched Etched Etched
Package CoinRoll CoinRoll CoinRoll



150MM/200MM Test wafer
 

150MM
SPEC 0.2um≤30ea
Diameter(mm) 150±0.2mm
Type P
Olyfra length 57.5mm±2.5mm 47.5mm±2.5mm
Resistance value ( Ω·cm ) 1-100
Thickness(μm) SEMI JEIDA
675um±25um 675um±25um
TTV(μm) ≤30um
BOW(μm) ≤40um
WARP(μm) ≤40um
Surface impurity ≤5.0E 10 atom/cm²


 
200MM
SPEC 0.2um≤30ea -
Diameter(mm) 200±0.2mm
Type P
Crystal orientation <110>±1
Notch direction
Resistance value ( Ω·cm ) 1-100
Thickness(μm) 725um±25um
TTV(μm) ≤25um ≤2um
BOW(μm) ≤40um
WARP(μm)
LM NO
Surface impurity ≤5.0E 10 atom/cm²


300MM Test wafer
 
300MM
SPEC 0.045um≤50ea 0.065um≤50ea 0.09um<50ea 0.12um<50ea
Manufacturing method CZ
Diameter(mm) 300±0.2mm
Type/Dopant P/Boron
Crystal orientation <100>±1
Notch direction
Resistance value (Ω·cm) 1-100
Thickness(μm) 775±25
TTV(μm) ≤10
BOW(μm) ≤40
WARP(μm)
LM T7+ OCR
Surface impurity <1 E10 Atoms/cm²



200MM/300MM Oxide wafer

 
  200MM 300MM
Oxide thickness 500±25nm
Variation in oxide thickness
(for one wafer)		 <3%
Variation in oxide thickness
(for multiple wafers)		 <3%
SPEC 0.2μm≤30ea
Diameter(mm) 200±0.2mm 300±0.2mm
Type P
Crystal orientation <100>±1
Notch direction <100>±1
Resistance value (Ω ·cm) 1-100
Thickness(μm) 725±25
TTV(μm) ≤25 ≤10
BOW(μm) ≤40
WARP(μm) ≤40
Surface impurity ≤5.0 E10 Atom/cm² <1 E10 Atoms/cm²


* Please contact us for other film types, film thickness, and film composition.


 

Certifications

2/4/6/8/12 Inch Wafer Single Crystal Si Substrate Type N/P Optional Silicon Carbide Silicon Wafer

Packaging & Shipping

2/4/6/8/12 Inch Wafer Single Crystal Si Substrate Type N/P Optional Silicon Carbide Silicon Wafer

Company Profile

2/4/6/8/12 Inch Wafer Single Crystal Si Substrate Type N/P Optional Silicon Carbide Silicon Wafer2/4/6/8/12 Inch Wafer Single Crystal Si Substrate Type N/P Optional Silicon Carbide Silicon Wafer

Our Advantages

2/4/6/8/12 Inch Wafer Single Crystal Si Substrate Type N/P Optional Silicon Carbide Silicon Wafer2/4/6/8/12 Inch Wafer Single Crystal Si Substrate Type N/P Optional Silicon Carbide Silicon Wafer

FAQ

Q: What's the way of shipping ?
A:  We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
Q: How to pay?
A:  T/T, PayPal and etc..
Q: What's the deliver time?
A:  For inventory: the delivery time is 5 workdays.
      For customized products: the delivery time is 7 to 25 workdays. According to the quantity.
Q: Can I customize the products based on my need?
A:  Yes, we can customize the material, specifications and optical coating for your optical components based on your needs.

Every customer's specification is unique and FSM can supply wafers that meet your exact specifications.

If you do not see the specification you require, please CONTACT FSM to speak with a member of our experienced and knowledgeable sales staff.

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Intrinsic Semiconductor
N-type Semiconductor
P-type Semiconductor
Other Semiconductors
Semiconductor Silicon

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