Silicon Wafer, Dummy Wafer, Test Wafer, Oxide Wafer, CZ Growth Method, Boron

Product Details
Customization: Available
Application: Semi Standard
Material: Compound Semiconductor
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  • Silicon Wafer, Dummy Wafer, Test Wafer, Oxide Wafer, CZ Growth Method, Boron
  • Silicon Wafer, Dummy Wafer, Test Wafer, Oxide Wafer, CZ Growth Method, Boron
  • Silicon Wafer, Dummy Wafer, Test Wafer, Oxide Wafer, CZ Growth Method, Boron
  • Silicon Wafer, Dummy Wafer, Test Wafer, Oxide Wafer, CZ Growth Method, Boron
  • Silicon Wafer, Dummy Wafer, Test Wafer, Oxide Wafer, CZ Growth Method, Boron
  • Silicon Wafer, Dummy Wafer, Test Wafer, Oxide Wafer, CZ Growth Method, Boron
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  • Overview
  • Product Description
  • Product Parameters
  • Certifications
  • Packaging & Shipping
  • Company Profile
  • Our Advantages
  • FAQ
Overview

Basic Info.

Model NO.
12inch
Type
P-Type Semiconductor
Growth Method
CZ
Crystal Orientation
100
Dopant
Boron
Resistivity
1-100Ω
Frront Side
Polished
Edge
Polished
Diameter
300±0.2mm
Thickness
775±25μm
Transport Package
Semi Standard
Specification
TBD
Trademark
FSM
Origin
China
HS Code
3818001920
Production Capacity
5000PCS/Month

Product Description

Product Description
 

Why Choose FSM?

  • Expertise : With a team of seasoned experts and cutting-edge manufacturing facilities, we ensure the delivery of consistently superior quality wafers.
  • Wide Range of Products : From high-grade Czochralski (CZ) and Float Zone (FZ) silicon wafers to advanced SOI and durable glass wafers, our extensive selection meets diverse and specific requirements.
  • Customization : We excel in crafting custom wafers tailored to your unique specifications, guaranteeing the success of your project.
  • Fast Turnaround : Our efficient processes and readily available inventory enable swift delivery, ensuring your projects remain on track.
  • Global Reach : We provide worldwide shipping from our expansive China and Japan warehouses, serving a vast clientele in over 50 countries.
Silicon Wafer, Dummy Wafer, Test Wafer, Oxide Wafer, CZ Growth Method, Boron
Dummy wafers (also known as test wafers) are primarily used for experimentation and testing, distinguishing them from standard product wafers.
Accordingly, reclaimed wafers are predominantly utilized as dummy wafers (test wafers).

Dummy wafers are frequently employed in production devices to enhance safety at the onset of the production process. They are also used for delivery checks and process evaluations.
Given their frequent use in experiments and tests, the size and thickness of dummy wafers are critical factors in most scenarios.
Silicon Wafer, Dummy Wafer, Test Wafer, Oxide Wafer, CZ Growth Method, BoronSilicon Wafer, Dummy Wafer, Test Wafer, Oxide Wafer, CZ Growth Method, Boron
Wafers treated with film deposition are referred to as film wafers.
Examples of films used (film growth) include isolation films for layer separation, metal films for conductivity, and process materials such as resist and protective films.
Silicon Wafer, Dummy Wafer, Test Wafer, Oxide Wafer, CZ Growth Method, BoronSilicon Wafer, Dummy Wafer, Test Wafer, Oxide Wafer, CZ Growth Method, Boron
Product Parameters
 

Reference Values for Optimal Use

Item Specification
Diameter 150mm 200mm 300mm
Type P/N P/N P/N
Notch SEMI/JEIDA Notch/OF Notch
Thickness(μm) 675±25/625±25 725±25 725±25
Surface Polished Polished Polished
Inside Etched Etched Etched
Package CoinRoll CoinRoll CoinRoll
 

150MM/200MM Premium Test Wafer

150MM
SPEC 0.2um≤30ea
Diameter(mm) 150±0.2mm
Type P
Olyfra length 57.5mm±2.5mm 47.5mm±2.5mm
Resistance value ( Ω·cm ) 1-100
Thickness(μm) SEMI JEIDA
675um±25um 675um±25um
TTV(μm) ≤30um
BOW(μm) ≤40um
WARP(μm) ≤40um
Surface impurity ≤5.0E 10 atom/cm²
 
200MM
SPEC 0.2um≤30ea -
Diameter(mm) 200±0.2mm
Type P
Crystal orientation <110>±1
Notch direction
Resistance value ( Ω·cm ) 1-100
Thickness(μm) 725um±25um
TTV(μm) ≤25um ≤2um
BOW(μm) ≤40um
WARP(μm)
LM NO
Surface impurity ≤5.0E 10 atom/cm²
 
300MM High-Precision Test Wafer
300MM
SPEC 0.045um≤50ea 0.065um≤50ea 0.09um<50ea 0.12um<50ea
Manufacturing method CZ
Diameter(mm) 300±0.2mm
Type/Dopant P/Boron
Crystal orientation <100>±1
Notch direction
Resistance value (Ω·cm) 1-100
Thickness(μm) 775±25
TTV(μm) ≤10
BOW(μm) ≤40
WARP(μm)
LM T7+ OCR
Surface impurity <1 E10 Atoms/cm²
 
200MM/300MM Superior Oxide Wafer
 
  200MM 300MM
Oxide thickness 500±25nm
Variation in oxide thickness
(for one wafer)
<3%
Variation in oxide thickness
(for multiple wafers)
<3%
SPEC 0.2μm≤30ea
Diameter(mm) 200±0.2mm 300±0.2mm
Type P
Crystal orientation <100>±1
Notch direction <100>±1
Resistance value (Ω ·cm) 1-100
Thickness(μm) 725±25
TTV(μm) ≤25 ≤10
BOW(μm) ≤40
WARP(μm) ≤40
Surface impurity ≤5.0 E10 Atom/cm² <1 E10 Atoms/cm²
 
* For inquiries on additional film types, thickness, and compositions, please get in touch with us.

At Fine Silicon Manufacturing (Shanghai) Ltd., we pride ourselves on offering top-tier silicon wafers at highly competitive prices. Our silicon wafers are the industry standard, known for their exceptional balance of cost-effectiveness and high performance.

Whether you seek silicon wafers for immediate purchase or wish to buy online, our inventory includes SEMI standard silicon wafers in diameters of 2", 3", 100mm, 125mm, 150mm, 200mm, and 300mm, all available for rapid shipping.

For custom wafer sizes or specifications beyond our standard offerings,connect with our dedicated teamto meet your unique semiconductor wafer needs, utilizing our extensive supply chain partnerships.

Certifications

Silicon Wafer, Dummy Wafer, Test Wafer, Oxide Wafer, CZ Growth Method, Boron
Packaging & Shipping

Silicon Wafer, Dummy Wafer, Test Wafer, Oxide Wafer, CZ Growth Method, Boron
Company Profile
 
Fine Silicon Manufacturing(Shanghai) Ltd. was established in August 2008. Nestled in the heart of Shanghai's burgeoning Pudong New Area, we proudly operate a state-of-the-art wafer reclaim factory. Our primary focus is the meticulous lapping and polishing of 6-12 inch wafers, boasting an impressive capacity of 50K PCS/month. Additionally, we serve as a distinguished agent for particle-controlled test wafers reclaim, advanced wafer film coating, and precision wafer thinning services. For more information and to explore seamless collaborations, please CONTACT US at your earliest convenience.
Silicon Wafer, Dummy Wafer, Test Wafer, Oxide Wafer, CZ Growth Method, Boron
 
 
Silicon Wafer, Dummy Wafer, Test Wafer, Oxide Wafer, CZ Growth Method, Boron
Our Advantages

Silicon Wafer, Dummy Wafer, Test Wafer, Oxide Wafer, CZ Growth Method, BoronSilicon Wafer, Dummy Wafer, Test Wafer, Oxide Wafer, CZ Growth Method, Boron
FAQ
 

Q: What are the available shipping methods?
A: We offer a variety of shipping options including DHL, FedEx, ***, UPS, EMS, and SF Express.
Q: What payment methods do you accept?
A: We accept T/T and PayPal payments and other convenient payment methods.
Q: What is the delivery time?
A: For items in inventory, the delivery time is typically within 5 working days.
For customized products, the delivery time ranges from 7 to 25 working days, depending on the quantity ordered.
Q: Is it possible to customize the products according to my needs?
A: Absolutely! We can tailor the material, specifications, and optical coatings of your optical components to meet your precise requirements.

Each customer's specifications are unique, and Fine Silicon Manufacturing (Shanghai) Ltd. can provide wafers that meet your exact needs.

If you don't see the specifications you need, please
to speak with a member of our experienced and knowledgeable sales team.

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